ROGALSKI A, MARTYNIUK P. Mid-wavelength infrared nBn for HOT detectors[J]. Journal of electronic materials, 2014, 43(8): 2963–2969.

Article  ADS  Google Scholar 

LIU Z, ZHAO Z F, GUO H M, et al. Band structure and optical absorption in InAs/GaSb quantum well[J]. Acta physica sinica, 2012, 61(21): 217303.

Article  Google Scholar 

MANYK T, HACKIEWICZ K, RUTKOWSKI J, et al. Theoretical simulation of T2SLs InAs/GaSb cascade photodetector for HOT condition[J]. Journal of semiconductors, 2018, 39(9): 38–41.

Article  Google Scholar 

LIU Z J, ZHU L Q, ZHENG X T, et al. Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy[J]. Chinese physics B, 2022, 31(12): 128503.

Article  ADS  Google Scholar 

MANASREH M O. Antimonide-related strained-layer heterostructures[J]. Lasers optics & photonics, 1997.

HUANG J L, YAN S L, XUE T, et al. Mid-wavelength InAs/InAsSb superlattice photodetector with background limited performance temperature higher than 160 K[J]. IEEE transactions on electron devices, 2022, 69(8).

LI H, ZHANG Q, QI X, et al. High resolution X-ray diffraction study in InAs/GaSb superlattice[J]. Ferroelectrics, 2022, 596(1): 86–94.

Article  ADS  Google Scholar 

SUN Y R, DONG J R, HE Y, et al. A six-junction GaAs laser power converter with different sizes of active aperture[J]. Optoelectronics letter, 2017, 13(1): 21–24.

Article  ADS  Google Scholar 

YU H L, WU H Y, ZHU H J, et al. Molecular beam epitaxy of zero lattice-mismatch InAs/GaSb type-II superlattice[J]. Chinese physics letter, 2016, 33(12): 142–145.

Google Scholar 

WANG Y B, XU Y, ZHANG Y, et al. Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors[J]. Chinese physics B, 2011, 20(6): 6.

Article  Google Scholar 

ZHU H, LIU J, ZHU H, et al. High operating temperature InAs/GaSb superlattice based mid wavelength infrared photodetectors grown by MOCVD[J]. Photonics, 2021, 8(12).

VURGAFTMAN I, AIFER E H, CANEDY C L, et al. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes[J]. Applied physics letter, 2006, 89(12): 4757.

Article  Google Scholar 

HILL C J, SOIBEL A, KEO S A, et al. Growth and performance of superlattice-based long wavelength complementary barrier infrared detectors (CBIRDs)[J]. SPIE proceedings, 2010, 7660.

AIFER E H, WARNER J H, STINE R R, et al. Passivation of W-structured type-II superlattice long-wave infrared photodiodes[J]. SPIE proceedings, 2007, 6542.

MENG C, LI J, YU L, et al. Investigation of a noise source and its impact on the photocurrent performance of long-wave-infrared InAs/GaSb type-II superlattice detectors[J]. Optics express, 2020, 28(10): 14753–14761.

Article  ADS  Google Scholar 

LEE H J, KO S Y, KIM Y H, et al. Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector[J]. Journal of semiconductors, 2020, 41(6): 062302.

Article  ADS  Google Scholar 

CUI S N, CHEN W Q, JIANG D W, et al. Dark current simulation and analysis for InAs/GaSb long wavelength infrared barrier detectors[J]. 2022, 121: 104006.

Google Scholar 

MARTYNIUK P, WROBEL J, PLIS E, et al. Performance modeling of MWIR InAs/GaSb/B-Al0.2Ga0.8Sb type-II superlattice nBn detector[J]. Semiconductor science & technology, 2012, 27(5): 55002–55011.

Article  Google Scholar 

NGUYEN B M, RAZEGHI M, NATHAN V, et al. Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes[J]. Quantum sensing and nanophotonic devices IV, 2007, 6479: 10.

Google Scholar 

LI N, CHEN W, ZHENG D, et al. The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection[J]. Infrared physics & technology, 2020, 111: 103461.

Article  Google Scholar 

NGUYEN B M, HOFFMAN D, HUANG K W, et al. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K[J]. Applied physics letter, 2008, 93(12): 085316.

Article  Google Scholar 

WANG F, CHEN J, XU Z. et al. Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection[J]. Optics express, 2017, 25(3): 1629–1635.

Article  ADS  Google Scholar 

GAUTAM N, MYERS S, BARVE A V, et al. Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices[J]. Infrared physics & technology, 2013, 59: 72–77.

Article  ADS  Google Scholar 

JANG A, LEE H J, KIM Y C, et al. Electrical characteristics of a Ga-free T2SL mid-wave infrared nBn detector based on an InAs/AlAsSb/InAsSb barrier[J]. Journal of electronic materials, 2022, 9: 51.

Google Scholar 

CERVERA C, JAWOROWICZ K, AT-KACI H, et al. Temperature dependence performances of InAs/GaSb superlattice photodiode[J]. Infrared physics & technology, 2011, 54(3): 258–262.

Article  ADS  Google Scholar 

HOANG A H, DEHZANGI A, ADHIKARY S, et al. High performance bias-selectable three-color short-wave/mid-wave/ long-wave infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices[J]. Scientific reports, 2016, 6: 24144.

Article  ADS  Google Scholar 

PLIS E, RODRIGUEZ J B, LEE S J, et al. Electrochemical sulphur passivation of InAs/GaSb strain layer superlattice detectors[J]. Electronics letter, 2006, 42(21).

KIM H S. Dark current analysis of an InAs/GaSb type II superlattice infrared photodiode with SiO2 passivation[J]. Journal of the Korean Physical Society, 2021, 78(11): 1141–1146.

Article  ADS  Google Scholar 

KIM H S. Performance of an InAs_GaSb type-II superlattice photodiode with Si3N4 surface passivation[J]. Current optics and photonics, 2021, 5(2): 129–133.

Google Scholar 

SUZUKI R, OZAKI K, TSUNODA K, et al. ALD-Al2O3 passivation effects on surface characteristics of InAs/GaSb type-II superlattice infrared photodetectors[C]//Infrared Technology and Applications XLV, April 14–18, 2019, Baltimore, Maryland, USA.

PLIS E, MYERS S, KHOSHAKHLAGH A, et al. InAs/GaSb strained layer superlattice detectors with nBn design[J]. Infrared physics technology, 2009, 52(6): 335–339.

Article  ADS  Google Scholar 

HOOD A, HOFFMAN D, NGUYEN B M, et al. High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared[J]. Applied physics letter, 2006, 89(9): 286–324.

Article  Google Scholar