Gallium Nitride (GaN): Physics, Devices, and Technology, Ed. by A. F. Medjdoub and K. Iniewski (CRC Press, New York, 2016).
M. N. Gurusinghe, S. K. Davidsson, and T. G. Andersson, Phys. Rev. B 72, 045316 (2005). https://doi.org/10.1103/PhysRevB.72.045316
Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications, Ed. by P. Wellmann (Wiley-VCH, 2022).
W. Banerjee, Electronics 9, 1029 (2020). https://doi.org/10.3390/electronics9061029
J. Zhu, T. Zhang, Y. Yang, et al., Appl. Phys. Rev. 7, 011312 (2020). https://doi.org/10.1063/1.5118217
Y. Guo, W. Hu, Ch. Zhang, et al., J. Phys. D: Appl. Phys. 53, 195101 (2020). https://doi.org/10.1088/1361-6463/ab7517
C. H. Ho, J. R. Retamal, P. K. Yang, et al., Sci. Rep. 7, 44429 (2017). https://doi.org/10.1038/srep44429
Article CAS PubMed PubMed Central ADS Google Scholar
C. Chen, Y. C. Yang, F. Zeng, et al., Appl. Phys. Lett. 97, 083502 (2010). https://doi.org/10.1063/1.3483158
H. D. Kim, H. M. An, E. B. Lee, et al., IEEE Trans. Electron. Devices 58, 3566 (2011). https://doi.org/10.1109/TED.2011.2162518
Article CAS ADS Google Scholar
C. C. Lin, H. Y. Liou, S.-Y. Chu, et al., CrystEngComm 20, 6230 (2018). https://doi.org/10.1039/C8CE00966J
C.-C. Lin, H.-Y. Liou, P. H. Hung, et al., IEEE Trans. Electron. Devices 66, 4716 (2019). https://doi.org/10.1109/TED.2019.2939365
Article CAS ADS Google Scholar
K.-P. Min, Ch.-Y. Li, T.-J. Chang, et al., ACS Appl. Electron. Mater. 3, 5327 (2021). https://doi.org/10.1021/acsaelm.1c00823
C. Stampfl and C. G. Van de Walle, Phys. Rev. B 65, 155212 (2002). https://doi.org/10.1103/PhysRevB.65.155212
Ch. Freysoldt, B. Grabowski, T. Hickel, et al., Rev. Mod. Phys. 86, 253 (2014). https://doi.org/10.1103/RevModPhys.86.253
Y. Gao, D. Sun, X. Jiang, et al., J. Appl. Phys. 125, 215705 (2019). https://doi.org/10.1063/1.5094356
R. Hrytsak, P. Kempisty, E. Grzanka, et al., Materials 15, 478 (2022). https://doi.org/10.3390/ma15020478
Article CAS PubMed PubMed Central ADS Google Scholar
S. Limpijumnong and C. G. Van de Walle, Phys. Rev. B 69, 035207. https://doi.org/10.1103/PhysRevB.69.035207
A. F. Wright and T. R. Mattsson, J. Appl. Phys. 96, 2015 (2004). https://doi.org/10.1063/1.1767981
Article CAS ADS Google Scholar
Y. Chen, L. Wu, D. Liang, et al., Comput. Mater. Sci. 188, 110169 (2021). https://doi.org/10.1016/j.commatsci.2020.110169
S. B. Zhang and J. E. Northrup, Phys. Rev. Lett. 67, 2339 (1991). https://doi.org/10.1103/PhysRevLett.67.2339
Article CAS PubMed ADS Google Scholar
C. G. Van de Walle and J. Neugebauer, Appl. Phys. Rev. 95, 3851 (2004). https://doi.org/10.1063/1.1682673
Article CAS ADS Google Scholar
C. Freysoldt, J. Neugebauer, and C. G. Van de Walle, Phys. Rev. Lett. 102, 016402 (2009). https://doi.org/10.1103/PhysRevLett.102.016402
C. Freysoldt, J. Neugebauer, and C. G. Van de Walle, Phys. Status Solidi B 248, 1067 (2011). https://doi.org/10.1002/pssb.201046289
Article CAS ADS Google Scholar
L. Gordon, J. B. Varley, J. L. Lyons, et al., Phys. Status. Solidi RRL 9, 1067 (2015). https://doi.org/10.1002/pssr.201510165
CRC Handbook of Chemistry and Physics, 2016–2017, 97th ed., Ed. by W. M. Haynes (CRC Press, Ann Arbor, MI, 2014).
P. E. Blochl, Phys. Rev. B 50, 17953 (1994). https://doi.org/10.1103/physrevb.50.17953
Article CAS ADS Google Scholar
D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980). https://doi.org/10.1103/physrevlett.45.566
Article CAS ADS Google Scholar
G. Kresse and J. Hafner, J. Phys: Condens. Mater. 6, 8245 (1994). https://doi.org/10.1088/0953-8984/6/40/015
Article CAS ADS Google Scholar
G. Kresse and J. Furthmuller, Phys. Rev. B 54, 169 (1996). https://doi.org/10.1103/physrevb.54.11169
J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77 (18), 3865 (1996). https://doi.org/10.1103/physrevlett.77.3865
Article CAS PubMed ADS Google Scholar
I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94 (11), 3675 (2003). https://doi.org/10.1063/1.1368156
Article CAS ADS Google Scholar
M. R. Ranade, F. Tessier, A. Navrotsky, and R. Marchand, J. Mater. Res. 16, 2824 (2001). https://doi.org/10.1557/JMR.2001.0389
Article CAS ADS Google Scholar
M. Feneberg, R. A. R. Leute, B. Neuschl, et al., Phys. Rev. B 82, 075208 (2010). https://doi.org/10.1103/physrevb.82.075208
H. Jónsson, G. Mills, and K. W. Jacobsen, Classical and Quantum Dynamics in Condensed Phase Simulations, Ed. by B. J. Berne (World Scientific, 1998).
G. Mills and H. Jónsson, Phys. Rev. Lett. 72, 1124 (1994). https://doi.org/10.1103/PhysRevLett.72.1124
Article CAS PubMed ADS Google Scholar
G. Mills, H. Jónsson, and G. K. Schenter, Surf. Sci. 324, 305 (1995). https://doi.org/10.1016/0039-6028(94)00731-4
Article CAS ADS Google Scholar
Yu. Goldberg, Properties of Advanced Semiconductor Materials. GaN, AlN, InN, BN, SiC, SiGe, Ed. by M. E. Levinshtein (Wiley, New York, 2001).
N. F. Mott, Rev. Mod. Phys. 40, 677 (1968). https://doi.org/10.1103/revmodphys.40.677
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